All MOSFET. SIR316DP Datasheet

 

SIR316DP Datasheet and Replacement


   Type Designator: SIR316DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 301 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: SO-8
 

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SIR316DP Datasheet (PDF)

 ..1. Size:504K  vishay
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SIR316DP

New ProductSiR316DPVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0068 at VGS = 10 V 30g TrenchFET Power MOSFET25 7.4 nC0.0093 at VGS = 4.5 V 100 % Rg Tested30g 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK

Datasheet: SIJ482DP , SIJ484DP , SIJ800DP , SIR158DP , SIR166DP , SIR168DP , SIR172ADP , SIR172DP , IRF1404 , SIR330DP , SIR401DP , SIR402DP , SIR403EDP , SIR404DP , SIR406DP , SIR408DP , SIR410DP .

History: 2SK3340-01 | 2SK3353 | AP92T03GJ-HF | STW13NK100Z | MDU2511SVRH | BLL1214-250R | IPW60R125CP

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