All MOSFET. SIR316DP Datasheet

 

SIR316DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIR316DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 17.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.3 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 301 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: SO-8

 SIR316DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIR316DP Datasheet (PDF)

 ..1. Size:504K  vishay
 sir316dp.pdf

SIR316DP SIR316DP

New ProductSiR316DPVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0068 at VGS = 10 V 30g TrenchFET Power MOSFET25 7.4 nC0.0093 at VGS = 4.5 V 100 % Rg Tested30g 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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