SIR440DP Specs and Replacement

Type Designator: SIR440DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 1720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00155 Ohm

Package: SO-8

SIR440DP substitution

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SIR440DP datasheet

 ..1. Size:307K  vishay
 sir440dp.pdf pdf_icon

SIR440DP

New Product SiR440DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFET RoHS 0.00155 at VGS = 10 V 60 COMPLIANT 20 43.5 nC 100 % Rg Tested 0.002 at VGS = 4.5 V 60 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Fixed Telecom High Current dc... See More ⇒

Detailed specifications: SIR416DP, SIR418DP, SIR424DP, SIR426DP, SIR428DP, SIR432DP, SIR436DP, SIR438DP, 2SK3878, SIR460DP, SIR462DP, SIR464DP, SIR466DP, SIR468DP, SIR470DP, SIR472ADP, SIR472DP

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