SIR470DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR470DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 38.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 102 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 720 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: SO-8
SIR470DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR470DP Datasheet (PDF)
sir470dp.pdf
New ProductSiR470DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFETRoHS0.0023 at VGS = 10 V 60COMPLIANT 40 45.5 nC 100 % Rg Tested0.00265 at VGS = 4.5 V 60 100 % UIS TestedAPPLICATIONSPowerPAK SO-8 Secondary Side Synchronous Rectifi
sir474dp.pdf
SiR474DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET0.0095 at VGS = 10 V 20 Low Thermal Resistance PowerPAK 30 8 nC0.012 at VGS = 4.5 V 20Package with Low 1.07 mm Profile Optimized for High-Side Synchronous RectifierPowerPAK SO-8Operation
sir472adp.pdf
SiR472ADPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () MAX. ID (A) a, g Qg (TYP.) 100 % Rg and UIS tested0.0090 at VGS = 10 V 1830 9 nC Optimized for high-side switching in 0.0115 at VGS = 4.5 V 18synchronous buck convertersPowerPAK SO-8 Single Material categorizat
sir476dp.pdf
New ProductSiR476DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFETRoHS0.0017 at VGS = 10 V 60COMPLIANT 25 42.5 nC 100 % Rg Tested0.0021 at VGS = 4.5 V 60 100 % Avalanche TestedAPPLICATIONSPowerPAK SO-8 VRM, POL, Server High C
sir472dp.pdf
SiR472DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFETRoHS0.012 at VGS = 10 V 20 Low Thermal Resistance PowerPAK COMPLIANT30 6.8 nC0.015 at VGS = 4.5 V 20Package with Low 1.07 mm Profile Optimized for High-Side Synchronous RectifierPowerPAK SO-
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