SIR470DP - параметры транзистора MOSFET, его аналоги, datasheet

SIR470DP Datasheet (PDF)

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New ProductSiR470DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFETRoHS0.0023 at VGS = 10 V 60COMPLIANT 40 45.5 nC 100 % Rg Tested0.00265 at VGS = 4.5 V 60 100 % UIS TestedAPPLICATIONSPowerPAK SO-8 Secondary Side Synchronous Rectifi

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SiR474DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET0.0095 at VGS = 10 V 20 Low Thermal Resistance PowerPAK 30 8 nC0.012 at VGS = 4.5 V 20Package with Low 1.07 mm Profile Optimized for High-Side Synchronous RectifierPowerPAK SO-8Operation

9.2. Size:385K vishay
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SiR472ADPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () MAX. ID (A) a, g Qg (TYP.) 100 % Rg and UIS tested0.0090 at VGS = 10 V 1830 9 nC Optimized for high-side switching in 0.0115 at VGS = 4.5 V 18synchronous buck convertersPowerPAK SO-8 Single Material categorizat

9.3. Size:478K vishay
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New ProductSiR476DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFETRoHS0.0017 at VGS = 10 V 60COMPLIANT 25 42.5 nC 100 % Rg Tested0.0021 at VGS = 4.5 V 60 100 % Avalanche TestedAPPLICATIONSPowerPAK SO-8 VRM, POL, Server High C