All MOSFET. SIR484DP Datasheet

 

SIR484DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIR484DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 17.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: SO-8

 SIR484DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIR484DP Datasheet (PDF)

 ..1. Size:320K  vishay
 sir484dp.pdf

SIR484DP SIR484DP

SiR484DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET0.0083 at VGS = 10 V 20 Low Thermal Resistance PowerPAK 20 7.1 nC0.0115 at VGS = 4.5 V 20Package with Low 1.07 mm Profile Optimized for High-Side Synchronous RectifierPowerPAK SO-8 Operation

 9.1. Size:503K  vishay
 sir482dp.pdf

SIR484DP SIR484DP

New ProductSiR482DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET30 12 nC0.0075 at VGS = 4.5 V 100 % Rg Tested35g 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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