SIR484DP Datasheet and Replacement
Type Designator: SIR484DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
Package: SO-8
SIR484DP substitution
SIR484DP Datasheet (PDF)
sir484dp.pdf

SiR484DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET0.0083 at VGS = 10 V 20 Low Thermal Resistance PowerPAK 20 7.1 nC0.0115 at VGS = 4.5 V 20Package with Low 1.07 mm Profile Optimized for High-Side Synchronous RectifierPowerPAK SO-8 Operation
sir482dp.pdf

New ProductSiR482DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET30 12 nC0.0075 at VGS = 4.5 V 100 % Rg Tested35g 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK
Datasheet: SIR464DP , SIR466DP , SIR468DP , SIR470DP , SIR472ADP , SIR472DP , SIR474DP , SIR476DP , IRF9540N , SIR492DP , SIR494DP , SIR496DP , SIR640ADP , SIR640DP , SIR642DP , SIR662DP , SIR698DP .
Keywords - SIR484DP MOSFET datasheet
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History: SSF3324 | SQJB00EP



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