SIR484DP Specs and Replacement
Type Designator: SIR484DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
Package: SO-8
SIR484DP substitution
- MOSFET ⓘ Cross-Reference Search
SIR484DP datasheet
sir484dp.pdf
SiR484DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET 0.0083 at VGS = 10 V 20 Low Thermal Resistance PowerPAK 20 7.1 nC 0.0115 at VGS = 4.5 V 20 Package with Low 1.07 mm Profile Optimized for High-Side Synchronous Rectifier PowerPAK SO-8 Operation ... See More ⇒
sir482dp.pdf
New Product SiR482DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET 30 12 nC 0.0075 at VGS = 4.5 V 100 % Rg Tested 35g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK ... See More ⇒
Detailed specifications: SIR464DP, SIR466DP, SIR468DP, SIR470DP, SIR472ADP, SIR472DP, SIR474DP, SIR476DP, SKD502T, SIR492DP, SIR494DP, SIR496DP, SIR640ADP, SIR640DP, SIR642DP, SIR662DP, SIR698DP
Keywords - SIR484DP MOSFET specs
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