SIR662DP Specs and Replacement

Type Designator: SIR662DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 3270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: SO-8

SIR662DP substitution

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SIR662DP datasheet

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SIR662DP

New Product SiR662DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0027 at VGS = 10 V 60 Low Qg for High Efficiency 60 0.0048 at VGS = 4.5 V 60 27.5 nC Material categorization For definitions of compliance please see 0.0033 at VGS = 6 V 60 www.vi... See More ⇒

Detailed specifications: SIR476DP, SIR484DP, SIR492DP, SIR494DP, SIR496DP, SIR640ADP, SIR640DP, SIR642DP, IRFB3607, SIR698DP, SIR770DP, SIR774DP, SIR788DP, SIR798DP, SIR800DP, SIR802DP, SIR804DP

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