All MOSFET. SIR662DP Datasheet

 

SIR662DP Datasheet and Replacement


   Type Designator: SIR662DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 3270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: SO-8
 

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SIR662DP Datasheet (PDF)

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SIR662DP

New ProductSiR662DPVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0027 at VGS = 10 V 60 Low Qg for High Efficiency60 0.0048 at VGS = 4.5 V 60 27.5 nC Material categorization:For definitions of compliance please see0.0033 at VGS = 6 V 60www.vi

Datasheet: SIR476DP , SIR484DP , SIR492DP , SIR494DP , SIR496DP , SIR640ADP , SIR640DP , SIR642DP , AON7506 , SIR698DP , SIR770DP , SIR774DP , SIR788DP , SIR798DP , SIR800DP , SIR802DP , SIR804DP .

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