All MOSFET. SIR662DP Datasheet

 

SIR662DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIR662DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 63.5 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 3270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: SO-8

 SIR662DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIR662DP Datasheet (PDF)

 ..1. Size:507K  vishay
 sir662dp.pdf

SIR662DP SIR662DP

New ProductSiR662DPVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0027 at VGS = 10 V 60 Low Qg for High Efficiency60 0.0048 at VGS = 4.5 V 60 27.5 nC Material categorization:For definitions of compliance please see0.0033 at VGS = 6 V 60www.vi

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AON6924 | HGM059N08AL | APT6025BVFR | KO3402 | FW811 | SI2304 | KNY3303A

 

 
Back to Top