All MOSFET. SIR698DP Datasheet

 

SIR698DP Datasheet and Replacement


   Type Designator: SIR698DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
   Package: SO-8
 

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SIR698DP Datasheet (PDF)

 ..1. Size:319K  vishay
 sir698dp.pdf pdf_icon

SIR698DP

SiR698DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.)Definition0.195 at VGS = 10 V 7.5 TrenchFET Power MOSFET100 5.2 nC0.230 at VGS = 6 V 6.9 100 % Rg and UIS Tested Low Qg for High EfficiencyPowerPAK SO-8 Compliant to RoHS Directive 2002/9

 9.1. Size:1115K  vishay
 sir690dp.pdf pdf_icon

SIR698DP

SiR690DPwww.vishay.comVishay SiliconixN-Channel 200 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD ThunderFET technology optimizes balanceD 8of RDS(on), Qg, Qsw and QossD 7D 6 100 % Rg and UIS tested5 Material categorization:for definitions of compliance please seewww.vishay.com/doc?9991212 S3 SAPPLICATIONSD4 S1G DC/DC convertersT

Datasheet: SIR484DP , SIR492DP , SIR494DP , SIR496DP , SIR640ADP , SIR640DP , SIR642DP , SIR662DP , IRLZ44N , SIR770DP , SIR774DP , SIR788DP , SIR798DP , SIR800DP , SIR802DP , SIR804DP , SIR808DP .

History: 2SK3919-ZK | IRFH6200

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