SIR698DP Specs and Replacement

Type Designator: SIR698DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm

Package: SO-8

SIR698DP substitution

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SIR698DP datasheet

 ..1. Size:319K  vishay
 sir698dp.pdf pdf_icon

SIR698DP

SiR698DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition 0.195 at VGS = 10 V 7.5 TrenchFET Power MOSFET 100 5.2 nC 0.230 at VGS = 6 V 6.9 100 % Rg and UIS Tested Low Qg for High Efficiency PowerPAK SO-8 Compliant to RoHS Directive 2002/9... See More ⇒

 9.1. Size:1115K  vishay
 sir690dp.pdf pdf_icon

SIR698DP

SiR690DP www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D ThunderFET technology optimizes balance D 8 of RDS(on), Qg, Qsw and Qoss D 7 D 6 100 % Rg and UIS tested 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S APPLICATIONS D 4 S 1 G DC/DC converters T... See More ⇒

Detailed specifications: SIR484DP, SIR492DP, SIR494DP, SIR496DP, SIR640ADP, SIR640DP, SIR642DP, SIR662DP, AON6380, SIR770DP, SIR774DP, SIR788DP, SIR798DP, SIR800DP, SIR802DP, SIR804DP, SIR808DP

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