All MOSFET. SIR774DP Datasheet

 

SIR774DP Datasheet and Replacement


   Type Designator: SIR774DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 705 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: SO-8
 

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SIR774DP Datasheet (PDF)

 ..1. Size:182K  vishay
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SIR774DP

New ProductSiR774DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21Definition VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) SkyFET Monolithic TrenchFET 0.0026 at VGS = 10 V 40Power MOSFET and Schottky Diode30 28.5 nC0.0034 at VGS = 4.5 V 40 100 % Rg and UIS Tested

 9.1. Size:510K  vishay
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SIR774DP

SiR770DPVishay SiliconixDual N-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS RDS(on) () ID (A)a, f Qg (Typ.)Definition0.021 at VGS = 10 V 8.0Channel-1 30 6.6 TrenchFET Power MOSFET0.025 at VGS = 4.5 V 8.0 100 % Rg and UIS Tested0.021 at VGS = 10 V 8.0Channel-2 30 6.6 Compliant

Datasheet: SIR494DP , SIR496DP , SIR640ADP , SIR640DP , SIR642DP , SIR662DP , SIR698DP , SIR770DP , IRLB4132 , SIR788DP , SIR798DP , SIR800DP , SIR802DP , SIR804DP , SIR808DP , SIR812DP , SIR818DP .

History: NCE6050A | STS8DN6LF6AG | EMB20N03V | SIR642DP | SQJ260EP | VB2658 | WML28N65F2

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