SIR774DP Datasheet and Replacement
Type Designator: SIR774DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 705 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: SO-8
SIR774DP substitution
SIR774DP Datasheet (PDF)
sir774dp.pdf
New ProductSiR774DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21Definition VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) SkyFET Monolithic TrenchFET 0.0026 at VGS = 10 V 40Power MOSFET and Schottky Diode30 28.5 nC0.0034 at VGS = 4.5 V 40 100 % Rg and UIS Tested
sir770dp.pdf
SiR770DPVishay SiliconixDual N-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS RDS(on) () ID (A)a, f Qg (Typ.)Definition0.021 at VGS = 10 V 8.0Channel-1 30 6.6 TrenchFET Power MOSFET0.025 at VGS = 4.5 V 8.0 100 % Rg and UIS Tested0.021 at VGS = 10 V 8.0Channel-2 30 6.6 Compliant
Datasheet: SIR494DP , SIR496DP , SIR640ADP , SIR640DP , SIR642DP , SIR662DP , SIR698DP , SIR770DP , CS150N03A8 , SIR788DP , SIR798DP , SIR800DP , SIR802DP , SIR804DP , SIR808DP , SIR812DP , SIR818DP .
History: UTT24N06G-TM3-T | APT10M19SVFR | SQJ431EP | FDD2512 | CEH2288 | IRHMB57Z60 | IRHM9260
Keywords - SIR774DP MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: UTT24N06G-TM3-T | APT10M19SVFR | SQJ431EP | FDD2512 | CEH2288 | IRHMB57Z60 | IRHM9260
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