SIR788DP Datasheet and Replacement
Type Designator: SIR788DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 555 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: SO-8
SIR788DP substitution
SIR788DP Datasheet (PDF)
sir788dp.pdf
New ProductSiR788DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY SkyFET Monolithic TrenchFET Gen III VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Power MOSFET and Schottky Diode0.0034 at VGS = 10 V 100 % Rg Tested6030 24 nC 100 % Avalanche Tested0.0043 at VGS = 4.5 V 60 Material categorization:For defi
Datasheet: SIR496DP , SIR640ADP , SIR640DP , SIR642DP , SIR662DP , SIR698DP , SIR770DP , SIR774DP , NCEP15T14 , SIR798DP , SIR800DP , SIR802DP , SIR804DP , SIR808DP , SIR812DP , SIR818DP , SIR820DP .
History: 2N4341 | 2N7002NXAK | BUK9213-30A | IRHMJ57260SE | BUK9207-30B | RSH090N03TB1 | BUK7M6R7-40H
Keywords - SIR788DP MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2N4341 | 2N7002NXAK | BUK9213-30A | IRHMJ57260SE | BUK9207-30B | RSH090N03TB1 | BUK7M6R7-40H
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