All MOSFET. SIR788DP Datasheet

 

SIR788DP Datasheet and Replacement


   Type Designator: SIR788DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 555 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: SO-8
 

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SIR788DP Datasheet (PDF)

 ..1. Size:337K  vishay
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SIR788DP

New ProductSiR788DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY SkyFET Monolithic TrenchFET Gen III VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Power MOSFET and Schottky Diode0.0034 at VGS = 10 V 100 % Rg Tested6030 24 nC 100 % Avalanche Tested0.0043 at VGS = 4.5 V 60 Material categorization:For defi

Datasheet: SIR496DP , SIR640ADP , SIR640DP , SIR642DP , SIR662DP , SIR698DP , SIR770DP , SIR774DP , AON6380 , SIR798DP , SIR800DP , SIR802DP , SIR804DP , SIR808DP , SIR812DP , SIR818DP , SIR820DP .

History: SI4860DY | WSR45P10 | STW30NF20 | 2SK3149 | DMP2104V | DMP2240UDM | IRL520NLPBF

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