SIR788DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR788DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 28.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 555 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: SO-8
SIR788DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR788DP Datasheet (PDF)
..1. Size:337K vishay
sir788dp.pdf
sir788dp.pdf
New ProductSiR788DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY SkyFET Monolithic TrenchFET Gen III VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Power MOSFET and Schottky Diode0.0034 at VGS = 10 V 100 % Rg Tested6030 24 nC 100 % Avalanche Tested0.0043 at VGS = 4.5 V 60 Material categorization:For defi
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