SIR788DP Specs and Replacement

Type Designator: SIR788DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 555 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: SO-8

SIR788DP substitution

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SIR788DP datasheet

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SIR788DP

New Product SiR788DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY SkyFET Monolithic TrenchFET Gen III VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Power MOSFET and Schottky Diode 0.0034 at VGS = 10 V 100 % Rg Tested 60 30 24 nC 100 % Avalanche Tested 0.0043 at VGS = 4.5 V 60 Material categorization For defi... See More ⇒

Detailed specifications: SIR496DP, SIR640ADP, SIR640DP, SIR642DP, SIR662DP, SIR698DP, SIR770DP, SIR774DP, NCEP15T14, SIR798DP, SIR800DP, SIR802DP, SIR804DP, SIR808DP, SIR812DP, SIR818DP, SIR820DP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.