All MOSFET. SIR798DP Datasheet

 

SIR798DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIR798DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 38.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 86 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 895 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00205 Ohm
   Package: SO-8

 SIR798DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIR798DP Datasheet (PDF)

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 sir798dp.pdf

SIR798DP SIR798DP

New ProductSiR798DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.)Definition0.00205 at VGS = 10 V SkyFET Monolithic TrenchFET 6030 41.6 nCPower MOSFET and Schottky Diode0.00300 at VGS = 4.5 V 60 100 % Rg and UIS Tested

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: PH3855L

 

 
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