SIR798DP Specs and Replacement

Type Designator: SIR798DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 895 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00205 Ohm

Package: SO-8

SIR798DP substitution

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SIR798DP datasheet

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SIR798DP

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Detailed specifications: SIR640ADP, SIR640DP, SIR642DP, SIR662DP, SIR698DP, SIR770DP, SIR774DP, SIR788DP, AON7506, SIR800DP, SIR802DP, SIR804DP, SIR808DP, SIR812DP, SIR818DP, SIR820DP, SIR826ADP

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs