All MOSFET. SIR798DP Datasheet

 

SIR798DP Datasheet and Replacement


   Type Designator: SIR798DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 38.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 895 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00205 Ohm
   Package: SO-8
 

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SIR798DP Datasheet (PDF)

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SIR798DP

New ProductSiR798DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.)Definition0.00205 at VGS = 10 V SkyFET Monolithic TrenchFET 6030 41.6 nCPower MOSFET and Schottky Diode0.00300 at VGS = 4.5 V 60 100 % Rg and UIS Tested

Datasheet: SIR640ADP , SIR640DP , SIR642DP , SIR662DP , SIR698DP , SIR770DP , SIR774DP , SIR788DP , IRFP250 , SIR800DP , SIR802DP , SIR804DP , SIR808DP , SIR812DP , SIR818DP , SIR820DP , SIR826ADP .

History: RFM12N18 | AON6920 | LBSS123LT1G

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