SIR802DP Specs and Replacement

Type Designator: SIR802DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 22.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: SO-8

SIR802DP substitution

- MOSFET ⓘ Cross-Reference Search

 

SIR802DP datasheet

 ..1. Size:509K  vishay
 sir802dp.pdf pdf_icon

SIR802DP

New Product SiR802DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.005 at VGS = 10 V 30 TrenchFET Gen III Power MOSFET 0.0057 at VGS = 4.5 V 20 30 15.5 nC 100 % Rg Tested 0.0076 at VGS = 2.5 V 30 100 % UIS Tested Compliant to RoH... See More ⇒

 0.1. Size:866K  cn vbsemi
 sir802dp-t1-ge3.pdf pdf_icon

SIR802DP

SIR802DP-T1-GE3 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0018 at VGS = 10 V 100 APPLICATIONS 30 82 nC 0.0025 at VGS = 4.5 V 90 OR-ing Server D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSOL... See More ⇒

 9.1. Size:500K  vishay
 sir804dp.pdf pdf_icon

SIR802DP

New Product SiR804DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0072 at VGS = 10 V 60 TrenchFET Power MOSFET 0.0078 at VGS = 7.5 V 100 60 24.8 nC 100 % Rg Tested 0.0103 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Di... See More ⇒

 9.2. Size:341K  vishay
 sir800dp.pdf pdf_icon

SIR802DP

New Product SiR800DP Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0023 at VGS = 10 V 50 TrenchFET Gen III Power MOSFET 0.0026 at VGS = 4.5 V 20 50 41 nC 100 % Rg Tested 0.0034 at VGS = 2.5 V 50 100 % UIS Tested Compliant to RoHS... See More ⇒

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Detailed specifications: SIR642DP, SIR662DP, SIR698DP, SIR770DP, SIR774DP, SIR788DP, SIR798DP, SIR800DP, IRFP450, SIR804DP, SIR808DP, SIR812DP, SIR818DP, SIR820DP, SIR826ADP, SIR826DP, SIR836DP

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.