All MOSFET. SIR802DP Datasheet

 

SIR802DP Datasheet and Replacement


   Type Designator: SIR802DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 22.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: SO-8
 

 SIR802DP substitution

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SIR802DP Datasheet (PDF)

 ..1. Size:509K  vishay
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SIR802DP

New ProductSiR802DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.005 at VGS = 10 V 30 TrenchFET Gen III Power MOSFET0.0057 at VGS = 4.5 V 20 30 15.5 nC 100 % Rg Tested0.0076 at VGS = 2.5 V 30 100 % UIS Tested Compliant to RoH

 0.1. Size:866K  cn vbsemi
sir802dp-t1-ge3.pdf pdf_icon

SIR802DP

SIR802DP-T1-GE3www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0018 at VGS = 10 V 100APPLICATIONS30 82 nC0.0025 at VGS = 4.5 V 90 OR-ing ServerDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABSOL

 9.1. Size:500K  vishay
sir804dp.pdf pdf_icon

SIR802DP

New ProductSiR804DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0072 at VGS = 10 V 60 TrenchFET Power MOSFET0.0078 at VGS = 7.5 V 100 60 24.8 nC 100 % Rg Tested0.0103 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Di

 9.2. Size:341K  vishay
sir800dp.pdf pdf_icon

SIR802DP

New ProductSiR800DPVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0023 at VGS = 10 V 50 TrenchFET Gen III Power MOSFET0.0026 at VGS = 4.5 V 20 50 41 nC 100 % Rg Tested0.0034 at VGS = 2.5 V 50 100 % UIS Tested Compliant to RoHS

Datasheet: SIR642DP , SIR662DP , SIR698DP , SIR770DP , SIR774DP , SIR788DP , SIR798DP , SIR800DP , IRF1407 , SIR804DP , SIR808DP , SIR812DP , SIR818DP , SIR820DP , SIR826ADP , SIR826DP , SIR836DP .

History: PHB101NQ04T | SI2323DDS-T1-GE3 | UTT150N03 | XGP6510B | MTH6N60 | APT10035B2LL | STD30NF03L

Keywords - SIR802DP MOSFET datasheet

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