All MOSFET. SIR808DP Datasheet

 

SIR808DP Datasheet and Replacement


   Type Designator: SIR808DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: SO-8
 

 SIR808DP substitution

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SIR808DP Datasheet (PDF)

 ..1. Size:477K  vishay
 sir808dp.pdf pdf_icon

SIR808DP

SiR808DPVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition 0.0089 at VGS = 10 V 20 TrenchFET Power MOSFET25 7.5 nC0.0119 at VGS = 4.5 V Low Thermal Resistance PowerPAK 20Package with Low 1.07 mm Profile Optimized for High-Side Synchron

 9.1. Size:509K  vishay
 sir802dp.pdf pdf_icon

SIR808DP

New ProductSiR802DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.005 at VGS = 10 V 30 TrenchFET Gen III Power MOSFET0.0057 at VGS = 4.5 V 20 30 15.5 nC 100 % Rg Tested0.0076 at VGS = 2.5 V 30 100 % UIS Tested Compliant to RoH

 9.2. Size:500K  vishay
 sir804dp.pdf pdf_icon

SIR808DP

New ProductSiR804DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0072 at VGS = 10 V 60 TrenchFET Power MOSFET0.0078 at VGS = 7.5 V 100 60 24.8 nC 100 % Rg Tested0.0103 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Di

 9.3. Size:341K  vishay
 sir800dp.pdf pdf_icon

SIR808DP

New ProductSiR800DPVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0023 at VGS = 10 V 50 TrenchFET Gen III Power MOSFET0.0026 at VGS = 4.5 V 20 50 41 nC 100 % Rg Tested0.0034 at VGS = 2.5 V 50 100 % UIS Tested Compliant to RoHS

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Datasheet: SIR698DP , SIR770DP , SIR774DP , SIR788DP , SIR798DP , SIR800DP , SIR802DP , SIR804DP , AO4407 , SIR812DP , SIR818DP , SIR820DP , SIR826ADP , SIR826DP , SIR836DP , SIR838DP , SIR844DP .

History: RSH065N06TB1 | SIR820DP | AP9960GD | AP9950AGP-HF | NP80N04NHE | ST2305 | UTT25P10G-TN3-R

Keywords - SIR808DP MOSFET datasheet

 SIR808DP cross reference
 SIR808DP equivalent finder
 SIR808DP lookup
 SIR808DP substitution
 SIR808DP replacement

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