SIR808DP Specs and Replacement

Type Designator: SIR808DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm

Package: SO-8

SIR808DP substitution

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SIR808DP datasheet

 ..1. Size:477K  vishay
 sir808dp.pdf pdf_icon

SIR808DP

SiR808DP Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0089 at VGS = 10 V 20 TrenchFET Power MOSFET 25 7.5 nC 0.0119 at VGS = 4.5 V Low Thermal Resistance PowerPAK 20 Package with Low 1.07 mm Profile Optimized for High-Side Synchron... See More ⇒

 9.1. Size:509K  vishay
 sir802dp.pdf pdf_icon

SIR808DP

New Product SiR802DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.005 at VGS = 10 V 30 TrenchFET Gen III Power MOSFET 0.0057 at VGS = 4.5 V 20 30 15.5 nC 100 % Rg Tested 0.0076 at VGS = 2.5 V 30 100 % UIS Tested Compliant to RoH... See More ⇒

 9.2. Size:500K  vishay
 sir804dp.pdf pdf_icon

SIR808DP

New Product SiR804DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0072 at VGS = 10 V 60 TrenchFET Power MOSFET 0.0078 at VGS = 7.5 V 100 60 24.8 nC 100 % Rg Tested 0.0103 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Di... See More ⇒

 9.3. Size:341K  vishay
 sir800dp.pdf pdf_icon

SIR808DP

New Product SiR800DP Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0023 at VGS = 10 V 50 TrenchFET Gen III Power MOSFET 0.0026 at VGS = 4.5 V 20 50 41 nC 100 % Rg Tested 0.0034 at VGS = 2.5 V 50 100 % UIS Tested Compliant to RoHS... See More ⇒

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Detailed specifications: SIR698DP, SIR770DP, SIR774DP, SIR788DP, SIR798DP, SIR800DP, SIR802DP, SIR804DP, AO4407, SIR812DP, SIR818DP, SIR820DP, SIR826ADP, SIR826DP, SIR836DP, SIR838DP, SIR844DP

Keywords - SIR808DP MOSFET specs

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