SIR812DP Specs and Replacement

Type Designator: SIR812DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 1130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00145 Ohm

Package: SO-8

SIR812DP substitution

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SIR812DP datasheet

 ..1. Size:476K  vishay
 sir812dp.pdf pdf_icon

SIR812DP

New Product SiR812DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.00145 at VGS = 10 V 60 30 109 nC 100 % Rg and UIS Tested 0.00165 at VGS = 4.5 V 60 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power... See More ⇒

 9.1. Size:479K  vishay
 sir818dp.pdf pdf_icon

SIR812DP

New Product SiR818DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition TrenchFET Gen III Power MOSFET 0.0028 at VGS = 10 V 50g 30 30.5 nC 100 % Rg and UIS Tested 0.0033 at VGS = 4.5 V 50g Compliant to RoHS Directive 2002/95/EC APPLICATIONS... See More ⇒

Detailed specifications: SIR770DP, SIR774DP, SIR788DP, SIR798DP, SIR800DP, SIR802DP, SIR804DP, SIR808DP, BS170, SIR818DP, SIR820DP, SIR826ADP, SIR826DP, SIR836DP, SIR838DP, SIR844DP, SIR846ADP

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