All MOSFET. SIR812DP Datasheet

 

SIR812DP Datasheet and Replacement


   Type Designator: SIR812DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 1130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00145 Ohm
   Package: SO-8
 

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SIR812DP Datasheet (PDF)

 ..1. Size:476K  vishay
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SIR812DP

New ProductSiR812DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.00145 at VGS = 10 V 6030 109 nC 100 % Rg and UIS Tested0.00165 at VGS = 4.5 V 60 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPower

 9.1. Size:479K  vishay
 sir818dp.pdf pdf_icon

SIR812DP

New ProductSiR818DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition TrenchFET Gen III Power MOSFET0.0028 at VGS = 10 V 50g30 30.5 nC 100 % Rg and UIS Tested0.0033 at VGS = 4.5 V 50g Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Datasheet: SIR770DP , SIR774DP , SIR788DP , SIR798DP , SIR800DP , SIR802DP , SIR804DP , SIR808DP , 18N50 , SIR818DP , SIR820DP , SIR826ADP , SIR826DP , SIR836DP , SIR838DP , SIR844DP , SIR846ADP .

History: STW70N60DM2

Keywords - SIR812DP MOSFET datasheet

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