All MOSFET. SIR836DP Datasheet

 

SIR836DP Datasheet and Replacement


   Type Designator: SIR836DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: SO-8
 

 SIR836DP substitution

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SIR836DP Datasheet (PDF)

 ..1. Size:325K  vishay
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SIR836DP

New ProductSiR836DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.019 at VGS = 10 V 21 TrenchFET Power MOSFET 40 5.8 nC 100 % Rg and UIS Tested0.0225 at VGS = 4.5 V 19.6 Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8 APPLICA

 9.1. Size:123K  vishay
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SIR836DP

New ProductSiR838DPVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.033 at VGS = 10 V 150 35 33 nC TrenchFET Power MOSFET 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONS Primary Side SwitchS 6.15

Datasheet: SIR802DP , SIR804DP , SIR808DP , SIR812DP , SIR818DP , SIR820DP , SIR826ADP , SIR826DP , 10N65 , SIR838DP , SIR844DP , SIR846ADP , SIR846DP , SIR850DP , SIR862DP , SIR864DP , SIR866DP .

History: HM3N40PR | SQJ848AEP | APT10078BLLG | APT10050B2VFRG | SQJ844AEP

Keywords - SIR836DP MOSFET datasheet

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