SIR836DP Specs and Replacement

Type Designator: SIR836DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: SO-8

SIR836DP substitution

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SIR836DP datasheet

 ..1. Size:325K  vishay
 sir836dp.pdf pdf_icon

SIR836DP

New Product SiR836DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.019 at VGS = 10 V 21 TrenchFET Power MOSFET 40 5.8 nC 100 % Rg and UIS Tested 0.0225 at VGS = 4.5 V 19.6 Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICA... See More ⇒

 9.1. Size:123K  vishay
 sir838dp.pdf pdf_icon

SIR836DP

New Product SiR838DP Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.033 at VGS = 10 V 150 35 33 nC TrenchFET Power MOSFET 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS Primary Side Switch S 6.15... See More ⇒

Detailed specifications: SIR802DP, SIR804DP, SIR808DP, SIR812DP, SIR818DP, SIR820DP, SIR826ADP, SIR826DP, 10N65, SIR838DP, SIR844DP, SIR846ADP, SIR846DP, SIR850DP, SIR862DP, SIR864DP, SIR866DP

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.