SIR836DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR836DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 10.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.8 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SO-8
SIR836DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR836DP Datasheet (PDF)
sir836dp.pdf
New ProductSiR836DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.019 at VGS = 10 V 21 TrenchFET Power MOSFET 40 5.8 nC 100 % Rg and UIS Tested0.0225 at VGS = 4.5 V 19.6 Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8 APPLICA
sir838dp.pdf
New ProductSiR838DPVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.033 at VGS = 10 V 150 35 33 nC TrenchFET Power MOSFET 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONS Primary Side SwitchS 6.15
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
