SIR838DP Specs and Replacement

Type Designator: SIR838DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SO-8

SIR838DP substitution

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SIR838DP datasheet

 ..1. Size:123K  vishay
 sir838dp.pdf pdf_icon

SIR838DP

New Product SiR838DP Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) Definition 0.033 at VGS = 10 V 150 35 33 nC TrenchFET Power MOSFET 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS Primary Side Switch S 6.15... See More ⇒

 9.1. Size:325K  vishay
 sir836dp.pdf pdf_icon

SIR838DP

New Product SiR836DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.019 at VGS = 10 V 21 TrenchFET Power MOSFET 40 5.8 nC 100 % Rg and UIS Tested 0.0225 at VGS = 4.5 V 19.6 Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICA... See More ⇒

Detailed specifications: SIR804DP, SIR808DP, SIR812DP, SIR818DP, SIR820DP, SIR826ADP, SIR826DP, SIR836DP, 5N60, SIR844DP, SIR846ADP, SIR846DP, SIR850DP, SIR862DP, SIR864DP, SIR866DP, SIR870ADP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.