SIR838DP Datasheet and Replacement
Type Designator: SIR838DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SO-8
SIR838DP substitution
SIR838DP Datasheet (PDF)
sir838dp.pdf

New ProductSiR838DPVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.033 at VGS = 10 V 150 35 33 nC TrenchFET Power MOSFET 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONS Primary Side SwitchS 6.15
sir836dp.pdf

New ProductSiR836DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.019 at VGS = 10 V 21 TrenchFET Power MOSFET 40 5.8 nC 100 % Rg and UIS Tested0.0225 at VGS = 4.5 V 19.6 Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8 APPLICA
Datasheet: SIR804DP , SIR808DP , SIR812DP , SIR818DP , SIR820DP , SIR826ADP , SIR826DP , SIR836DP , 13N50 , SIR844DP , SIR846ADP , SIR846DP , SIR850DP , SIR862DP , SIR864DP , SIR866DP , SIR870ADP .
History: BLM22N10-D | SJMN088R65FD | UT3401G-AE3-R | SE2102M | SE10080A | SGSP461 | WMM14N65C4
Keywords - SIR838DP MOSFET datasheet
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History: BLM22N10-D | SJMN088R65FD | UT3401G-AE3-R | SE2102M | SE10080A | SGSP461 | WMM14N65C4



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