All MOSFET. SIR850DP Datasheet

 

SIR850DP Datasheet and Replacement


   Type Designator: SIR850DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: SO-8
 

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SIR850DP Datasheet (PDF)

 ..1. Size:474K  vishay
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SIR850DP

SiR850DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.007 at VGS = 10 V 100 % Rg Tested30a COMPLIANT 25 8.4 nC 100 % UIS Tested0.009 at VGS = 4.5 V 30aAPPLICATIONSPowerPAK SO-8 Synchronous Buck- High-SideS6.15 mm 5.15 mm1 DS

Datasheet: SIR820DP , SIR826ADP , SIR826DP , SIR836DP , SIR838DP , SIR844DP , SIR846ADP , SIR846DP , 75N75 , SIR862DP , SIR864DP , SIR866DP , SIR870ADP , SIR870DP , SIR872ADP , SIR872DP , SIR874DP .

History: NTGS3441BT1G | TPA60R330M

Keywords - SIR850DP MOSFET datasheet

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