All MOSFET. SIR850DP Datasheet

 

SIR850DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIR850DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 20.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: SO-8

 SIR850DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIR850DP Datasheet (PDF)

 ..1. Size:474K  vishay
 sir850dp.pdf

SIR850DP SIR850DP

SiR850DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.007 at VGS = 10 V 100 % Rg Tested30a COMPLIANT 25 8.4 nC 100 % UIS Tested0.009 at VGS = 4.5 V 30aAPPLICATIONSPowerPAK SO-8 Synchronous Buck- High-SideS6.15 mm 5.15 mm1 DS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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