SIR850DP Specs and Replacement

Type Designator: SIR850DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: SO-8

SIR850DP substitution

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SIR850DP datasheet

 ..1. Size:474K  vishay
 sir850dp.pdf pdf_icon

SIR850DP

SiR850DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.007 at VGS = 10 V 100 % Rg Tested 30a COMPLIANT 25 8.4 nC 100 % UIS Tested 0.009 at VGS = 4.5 V 30a APPLICATIONS PowerPAK SO-8 Synchronous Buck - High-Side S 6.15 mm 5.15 mm 1 D S ... See More ⇒

Detailed specifications: SIR820DP, SIR826ADP, SIR826DP, SIR836DP, SIR838DP, SIR844DP, SIR846ADP, SIR846DP, 18N50, SIR862DP, SIR864DP, SIR866DP, SIR870ADP, SIR870DP, SIR872ADP, SIR872DP, SIR874DP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.