All MOSFET. SIR892DP Datasheet

 

SIR892DP Datasheet and Replacement


   Type Designator: SIR892DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 745 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: SO-8
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SIR892DP Datasheet (PDF)

 ..1. Size:508K  vishay
 sir892dp.pdf pdf_icon

SIR892DP

New ProductSiR892DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0032 at VGS = 10 V 50a, g 100 % Rg Tested25 20 nC0.0042 at VGS = 4.5 V 50a, g 100 % UIS TestedPowerPAK SO-8 APPLICATIONS Low-Side MOSFET in Synchronous

 9.1. Size:508K  vishay
 sir890dp.pdf pdf_icon

SIR892DP

New ProductSiR890DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0029 at VGS = 10 V 50g 100 % Rg Tested20 20 nC0.0040 at VGS = 4.5 V 50g 100 % UIS TestedPowerPAK SO-8APPLICATIONS Low-Side MOSFET in Synchronous Buck

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTM6N80 | BRCS200P03DP | IRFB3004GPBF | FK350301 | HM15N02Q | LKK47-06C5 | TSM4424CS

Keywords - SIR892DP MOSFET datasheet

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