APT19F100J Datasheet and Replacement
Type Designator: APT19F100J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 460 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 715 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
Package: SOT-227
APT19F100J substitution
APT19F100J Datasheet (PDF)
apt19f100j.pdf

APT19F100J 1000V, 20A, 0.44 Max, trr 290nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi
apt19m120j.pdf

APT19M120J 1200V, 19A, 0.53 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon
Datasheet: APT17N80BC3G , APT17N80SC3G , APT18F60B , APT18F60S , APT18M100B , APT18M100S , APT18M80B , APT18M80S , 50N06 , APT19M120J , APT20F50B , APT20F50S , APT20M11JFLL , APT20M11JLL , APT20M120JCU2 , APT20M120JCU3 , APT20M16B2FLLG .
History: ME7900EN-G | IXFN21N100Q | LSD80R2K8GT | 7N60L-TF3-T | ELM5E401PA | HTJ500N03 | CEP45N10
Keywords - APT19F100J MOSFET datasheet
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History: ME7900EN-G | IXFN21N100Q | LSD80R2K8GT | 7N60L-TF3-T | ELM5E401PA | HTJ500N03 | CEP45N10



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