All MOSFET. APT19F100J Datasheet

 

APT19F100J Datasheet and Replacement


   Type Designator: APT19F100J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 715 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: SOT-227
 

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APT19F100J Datasheet (PDF)

 ..1. Size:213K  microsemi
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APT19F100J

APT19F100J 1000V, 20A, 0.44 Max, trr 290nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

 9.1. Size:122K  microsemi
apt19m120j.pdf pdf_icon

APT19F100J

APT19M120J 1200V, 19A, 0.53 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

Datasheet: APT17N80BC3G , APT17N80SC3G , APT18F60B , APT18F60S , APT18M100B , APT18M100S , APT18M80B , APT18M80S , 50N06 , APT19M120J , APT20F50B , APT20F50S , APT20M11JFLL , APT20M11JLL , APT20M120JCU2 , APT20M120JCU3 , APT20M16B2FLLG .

History: ME7900EN-G | IXFN21N100Q | LSD80R2K8GT | 7N60L-TF3-T | ELM5E401PA | HTJ500N03 | CEP45N10

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