All MOSFET. APT48M80B2 Datasheet

 

APT48M80B2 Datasheet and Replacement


   Type Designator: APT48M80B2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 49 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-247
 

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APT48M80B2 Datasheet (PDF)

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APT48M80B2

APT48M80B2 APT48M80L 800V, 49A, 0.19 MaxN-Channel MOSFET T-MaxPower MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-264A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacit

Datasheet: APT4530AN , APT45M100J , APT47F60J , APT47M60J , APT47N60BC3G , APT47N60BCFG , APT47N60SC3G , APT47N65BC3G , IRFP250 , APT48M80L , APT4F120K , APT4F120S , APT4M120K , APT5010B2FLLG , APT5010B2LLG , APT5010LFLLG , APT5010LLLG .

History: HGS230N10AL | IXFL38N100P | DMP3056LSS | SH8K22 | FHU4N65E | MTN13N50FP | MPSD65M650

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