APT48M80B2 Datasheet and Replacement
Type Designator: APT48M80B2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 49 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 930 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-247
APT48M80B2 substitution
APT48M80B2 Datasheet (PDF)
apt48m80b2 apt48m80l.pdf

APT48M80B2 APT48M80L 800V, 49A, 0.19 MaxN-Channel MOSFET T-MaxPower MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-264A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacit
Datasheet: APT4530AN , APT45M100J , APT47F60J , APT47M60J , APT47N60BC3G , APT47N60BCFG , APT47N60SC3G , APT47N65BC3G , IRFP250 , APT48M80L , APT4F120K , APT4F120S , APT4M120K , APT5010B2FLLG , APT5010B2LLG , APT5010LFLLG , APT5010LLLG .
History: HGB110N20S
Keywords - APT48M80B2 MOSFET datasheet
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History: HGB110N20S



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