APT4M120K Specs and Replacement
Type Designator: APT4M120K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.4 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
Package: TO-220
APT4M120K substitution
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APT4M120K datasheet
apt4m120k.pdf
APT4M120K 1200V, 5A, 3.80 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-220 A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-si... See More ⇒
Detailed specifications: APT47N60BC3G, APT47N60BCFG, APT47N60SC3G, APT47N65BC3G, APT48M80B2, APT48M80L, APT4F120K, APT4F120S, AO4407, APT5010B2FLLG, APT5010B2LLG, APT5010LFLLG, APT5010LLLG, APT5012JN, APT5014B2VFRG, APT5014B2VRG, APT5014BFLLG
Keywords - APT4M120K MOSFET specs
APT4M120K cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SD8901CY | APT4F120S | BRCS90P03DP | H2N65D | DMP6250SE | DMP6110SSD | WMR05P04TS
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