APT5015BVFRG
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT5015BVFRG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 370
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 200
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 600
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15
Ohm
Package:
TO-247
APT5015BVFRG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT5015BVFRG
Datasheet (PDF)
..1. Size:115K apt
apt5015bvfrg.pdf 
APT5015BVFRAPT5015SVFR500V 32A 0.150BVFRPOWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V SVFRalso achieves faster switching speeds through optimized gate layout.
3.1. Size:375K inchange semiconductor
apt5015bvfr.pdf
isc N-Channel MOSFET Transistor APT5015BVFRFEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
5.1. Size:60K apt
apt5015bvr.pdf
APT5015BVR500V 32A 0.150POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
5.2. Size:375K inchange semiconductor
apt5015bvr.pdf
isc N-Channel MOSFET Transistor APT5015BVRFEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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