All MOSFET. APT51M50J Datasheet

 

APT51M50J Datasheet and Replacement


   Type Designator: APT51M50J
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 51 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT-227
 

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APT51M50J Datasheet (PDF)

 ..1. Size:214K  microsemi
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APT51M50J

APT51M50J 500V, 51A, 0.075 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon g

 9.1. Size:214K  microsemi
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APT51M50J

APT51F50J 500V, 51A, 0.075 Max, trr 310nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig

Datasheet: APT50M80B2VRG , APT50M80LVFRG , APT50M80LVRG , APT50M85B2VFRG , APT50M85LVFRG , APT50M85LVR , APT50N60JCCU2 , APT51F50J , IRFB4227 , APT53F80J , APT53N60BC6 , APT53N60SC6 , APT5570AN , APT56F50B2 , APT56F50L , APT56F60B2 , APT56F60L .

History: AP3P2R2CDT

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