APT51M50J Datasheet. Specs and Replacement
Type Designator: APT51M50J 📄📄
Type of Transistor: MOFETS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 480 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 51 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 1250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOT-227
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APT51M50J substitution
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APT51M50J datasheet
apt51m50j.pdf
APT51M50J 500V, 51A, 0.075 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon g... See More ⇒
apt51f50j.pdf
APT51F50J 500V, 51A, 0.075 Max, trr 310ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig... See More ⇒
Detailed specifications: APT50M80B2VRG, APT50M80LVFRG, APT50M80LVRG, APT50M85B2VFRG, APT50M85LVFRG, APT50M85LVR, APT50N60JCCU2, APT51F50J, IRF3710, APT53F80J, APT53N60BC6, APT53N60SC6, APT5570AN, APT56F50B2, APT56F50L, APT56F60B2, APT56F60L
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