RFD10P03L Specs and Replacement

Type Designator: RFD10P03L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO251AA

RFD10P03L substitution

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RFD10P03L datasheet

 0.1. Size:178K  harris semi
 rfd10p03l-sm rfp10p03l.pdf pdf_icon

RFD10P03L

RFD10P03L, RFD10P03LSM, S E M I C O N D U C T O R RFP10P03L 10A, 30V, 0.200 , Logic Level P-Channel Power MOSFET May 1997 Features Description 10A, 30V These products are P-Channel power MOSFETs manufac- tured using the MegaFET process. This process, which uses rDS(ON) = 0.200 feature sizes approaching those of LSI circuits, gives opti- mum utilization of silicon, result... See More ⇒

Detailed specifications: RF1S640SM, RF1S70N03SM, RF1S70N06SM, RF1S9530SM, RF1S9540SM, RF1S9630SM, RF1S9640SM, RFB18N10CS, 7N60, RFD10P03LSM, RFD12N06RLE, RFD12N06RLESM, RFD14N05, RFD14N05L, RFD14N05LSM, RFD14N05SM, RFD14N06L

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