All MOSFET. RFD10P03L Datasheet

 

RFD10P03L Datasheet and Replacement


   Type Designator: RFD10P03L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO251AA
 

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RFD10P03L Datasheet (PDF)

 0.1. Size:178K  harris semi
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RFD10P03L

RFD10P03L, RFD10P03LSM,S E M I C O N D U C T O RRFP10P03L10A, 30V, 0.200, Logic LevelP-Channel Power MOSFETMay 1997Features Description 10A, 30V These products are P-Channel power MOSFETs manufac-tured using the MegaFET process. This process, which uses rDS(ON) = 0.200feature sizes approaching those of LSI circuits, gives opti-mum utilization of silicon, result

Datasheet: RF1S640SM , RF1S70N03SM , RF1S70N06SM , RF1S9530SM , RF1S9540SM , RF1S9630SM , RF1S9640SM , RFB18N10CS , MMIS60R580P , RFD10P03LSM , RFD12N06RLE , RFD12N06RLESM , RFD14N05 , RFD14N05L , RFD14N05LSM , RFD14N05SM , RFD14N06L .

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