All MOSFET. APT6M100K Datasheet

 

APT6M100K Datasheet and Replacement


   Type Designator: APT6M100K
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220
 

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APT6M100K Datasheet (PDF)

 ..1. Size:115K  microsemi
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APT6M100K

APT6M100K 1000V, 6A, 2.50 MAXN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

Datasheet: APT60M80L2VFRG , APT60M80L2VRG , APT60N60BCSG , APT60N90JC3 , APT66F60B2 , APT66F60L , APT66M60B2 , APT66M60L , HY1906P , APT7575AN , APT7575BN , APT7590AN , APT7590BN , APT75F50B2 , APT75F50L , APT75M50B2 , APT75M50L .

History: LBSS260DW1T1G | SSM3K01T | HAF2012S | YJG90G10A | CS6N70F | BUK9K18-40E | STN3414

Keywords - APT6M100K MOSFET datasheet

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