APT6M100K PDF Specs and Replacement
Type Designator: APT6M100K
Type of Transistor: MOFETS
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220
APT6M100K substitution
APT6M100K PDF Specs
apt6m100k.pdf
APT6M100K 1000V, 6A, 2.50 MAX N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga... See More ⇒
Detailed specifications: APT60M80L2VFRG , APT60M80L2VRG , APT60N60BCSG , APT60N90JC3 , APT66F60B2 , APT66F60L , APT66M60B2 , APT66M60L , AOD4184A , APT7575AN , APT7575BN , APT7590AN , APT7590BN , APT75F50B2 , APT75F50L , APT75M50B2 , APT75M50L .
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Keywords - APT6M100K MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2N7002ZDW
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