APT6M100K Datasheet. Specs and Replacement

Type Designator: APT6M100K  📄📄 

Type of Transistor: MOFETS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.8 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220

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APT6M100K datasheet

 ..1. Size:115K  microsemi
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APT6M100K

APT6M100K 1000V, 6A, 2.50 MAX N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga... See More ⇒

Detailed specifications: APT60M80L2VFRG, APT60M80L2VRG, APT60N60BCSG, APT60N90JC3, APT66F60B2, APT66F60L, APT66M60B2, APT66M60L, 75N75, APT7575AN, APT7575BN, APT7590AN, APT7590BN, APT75F50B2, APT75F50L, APT75M50B2, APT75M50L

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