APT7M120S Datasheet. Specs and Replacement
Type Designator: APT7M120S 📄📄
Type of Transistor: MOFETS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 335 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: D3PAK
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APT7M120S substitution
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APT7M120S datasheet
apt7m120b apt7m120s.pdf
APT7M120B APT7M120S 1200V, 8A, 2.1 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of t... See More ⇒
Detailed specifications: APT77N60BC6, APT77N60SC6, APT7F100B, APT7F100S, APT7F120B, APT7F120S, APT7F80K, APT7M120B, IRF640, APT8014L2FLLG, APT8018L2VFRG, APT8020B2FLLG, APT8020B2LLG, APT8020LFLLG, APT8020LLLG, APT8024B2FLLG, APT8024B2LLG
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MOSFET Parameters. How They Affect Each Other
History: IXFK80N15Q | SVF10N80K | CS7N80A8 | APG068N04Q | AGM056N10C | STI21NM60ND | 2SJ466
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