APT8M100B Datasheet. Specs and Replacement

Type Designator: APT8M100B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.8 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO-247

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APT8M100B substitution

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APT8M100B datasheet

 ..1. Size:212K  microsemi
 apt8m100b apt8m100s.pdf pdf_icon

APT8M100B

APT8M100B APT8M100S 1000V, 8A, 1.80 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of ... See More ⇒

 9.1. Size:117K  microsemi
 apt8m80k.pdf pdf_icon

APT8M100B

APT8M80K 800V, 8A, 1.35 MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga... See More ⇒

Detailed specifications: APT8090AN, APT8090BN, APT80F60J, APT80M60J, APT84F50B2, APT84F50L, APT84M50B2, APT84M50L, IRLB4132, APT8M100S, APT8M80K, APT901R1AN, APT901R1BN, APT901R1HN, APT901R3AN, APT901R3BN, APT901R3HN

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