All MOSFET. APT8M100B Datasheet

 

APT8M100B MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT8M100B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-247

 APT8M100B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT8M100B Datasheet (PDF)

 ..1. Size:212K  microsemi
 apt8m100b apt8m100s.pdf

APT8M100B APT8M100B

APT8M100B APT8M100S 1000V, 8A, 1.80 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

 9.1. Size:117K  microsemi
 apt8m80k.pdf

APT8M100B APT8M100B

APT8M80K 800V, 8A, 1.35 MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SMF14N65 | FDU3706 | FDS6676AS | TPCS8213 | 2SK3918 | STL18N65M2 | NCEP02T11D

 

 
Back to Top