All MOSFET. APT8M100S Datasheet

 

APT8M100S Datasheet and Replacement


   Type Designator: APT8M100S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: D3PAK
 

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APT8M100S Datasheet (PDF)

 ..1. Size:212K  microsemi
 apt8m100b apt8m100s.pdf pdf_icon

APT8M100S

APT8M100B APT8M100S 1000V, 8A, 1.80 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

 9.1. Size:117K  microsemi
 apt8m80k.pdf pdf_icon

APT8M100S

APT8M80K 800V, 8A, 1.35 MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

Datasheet: APT8090BN , APT80F60J , APT80M60J , APT84F50B2 , APT84F50L , APT84M50B2 , APT84M50L , APT8M100B , IRFB3607 , APT8M80K , APT901R1AN , APT901R1BN , APT901R1HN , APT901R3AN , APT901R3BN , APT901R3HN , APT901RBN .

History: SQS464EEN | FIR5N65FG

Keywords - APT8M100S MOSFET datasheet

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