APT901R1HN Datasheet. Specs and Replacement
Type Designator: APT901R1HN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO-258
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APT901R1HN substitution
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APT901R1HN datasheet
Detailed specifications: APT84F50L, APT84M50B2, APT84M50L, APT8M100B, APT8M100S, APT8M80K, APT901R1AN, APT901R1BN, 20N50, APT901R3AN, APT901R3BN, APT901R3HN, APT901RBN, APT902R4BN, APT902RBN, APT904R2AN, APT904R2BN
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MOSFET Parameters. How They Affect Each Other
History: GP28S50GN220FP | APTM100A13SCG | TK16A60W | CS9N90FA9D | QM03N65D | AGM13T30D | JMSH0401MGQ
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