APT901R3HN Datasheet. Specs and Replacement
Type Designator: APT901R3HN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-258
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APT901R3HN substitution
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APT901R3HN datasheet
Detailed specifications: APT8M100B, APT8M100S, APT8M80K, APT901R1AN, APT901R1BN, APT901R1HN, APT901R3AN, APT901R3BN, RFP50N06, APT901RBN, APT902R4BN, APT902RBN, APT904R2AN, APT904R2BN, APT904RAN, APT904RBN, APT94N60L2C3G
Keywords - APT901R3HN MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
MOSFET Parameters. How They Affect Each Other
History: AFN1912E | APTM100A13SCG | CEP140N10 | STD8N10T4 | QM03N65D | SVF10N60T | IXFH42N50P2
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