APT901R3HN Datasheet. Specs and Replacement

Type Designator: APT901R3HN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-258

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Detailed specifications: APT8M100B, APT8M100S, APT8M80K, APT901R1AN, APT901R1BN, APT901R1HN, APT901R3AN, APT901R3BN, RFP50N06, APT901RBN, APT902R4BN, APT902RBN, APT904R2AN, APT904R2BN, APT904RAN, APT904RBN, APT94N60L2C3G

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs