APT97N65B2C6 Datasheet. Specs and Replacement

Type Designator: APT97N65B2C6  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 862 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 97 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 5045 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: TO-247

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APT97N65B2C6 datasheet

 ..1. Size:144K  microsemi
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APT97N65B2C6

APT97N65B2C6 APT97N65LC6 650V 97A 0.041 APT97N65B2C6 COOLMOS Power Semiconductors Super Junction MOSFET T-Max TO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT97N65LC6 Extreme dv/dt Rated D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with ... See More ⇒

Detailed specifications: APT904R2AN, APT904R2BN, APT904RAN, APT904RBN, APT94N60L2C3G, APT94N65B2C3G, APT94N65B2C6, APT94N65LC6, 10N65, APT97N65LC6, APT9F100B, APT9F100S, APT9M100B, APT9M100S, APTC60AM18SCG, APTC60AM24SCTG, APTC60AM35SCTG

Keywords - APT97N65B2C6 MOSFET specs

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