APT97N65B2C6 PDF and Equivalents Search

 

APT97N65B2C6 PDF Specs and Replacement


   Type Designator: APT97N65B2C6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 862 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 97 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 5045 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-247
 

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APT97N65B2C6 PDF Specs

 ..1. Size:144K  microsemi
 apt97n65b2c6 apt97n65lc6.pdf pdf_icon

APT97N65B2C6

APT97N65B2C6 APT97N65LC6 650V 97A 0.041 APT97N65B2C6 COOLMOS Power Semiconductors Super Junction MOSFET T-Max TO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT97N65LC6 Extreme dv/dt Rated D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with ... See More ⇒

Detailed specifications: APT904R2AN , APT904R2BN , APT904RAN , APT904RBN , APT94N60L2C3G , APT94N65B2C3G , APT94N65B2C6 , APT94N65LC6 , IRF1407 , APT97N65LC6 , APT9F100B , APT9F100S , APT9M100B , APT9M100S , APTC60AM18SCG , APTC60AM24SCTG , APTC60AM35SCTG .

History: STD10NM65N

Keywords - APT97N65B2C6 MOSFET specs

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