7N10G-AA3 Specs and Replacement
Type Designator: 7N10G-AA3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT223
7N10G-AA3 substitution
- MOSFET ⓘ Cross-Reference Search
7N10G-AA3 datasheet
7n10l 7n10g.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the ... See More ⇒
Detailed specifications: APTM50AM38SCTG, APTM50DAM38CTG, APTM50HM75SCTG, ATP304, ATP401, 2N5670, 2SK2255-01MR, 7N10L-AA3, IRF740, 7N10L-TN3, 7N10G-TN3, AO4466L, AOD4144, CS60N06C4, EMB20P03V, FTW20N50A, HY1506P
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