7N10G-AA3 MOSFET. Datasheet pdf. Equivalent
Type Designator: 7N10G-AA3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.8 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT223
7N10G-AA3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
7N10G-AA3 Datasheet (PDF)
9.1. Size:220K utc
7n10l 7n10g.pdf
7n10l 7n10g.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performanceand minimum on-state resistance. The UTC 7N10 uses planar stripeand DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the
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