All MOSFET. 7N10G-TN3 Datasheet

 

7N10G-TN3 Datasheet and Replacement


   Type Designator: 7N10G-TN3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO252
 

 7N10G-TN3 substitution

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7N10G-TN3 Datasheet (PDF)

 9.1. Size:220K  utc
 7n10l 7n10g.pdf pdf_icon

7N10G-TN3

UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performanceand minimum on-state resistance. The UTC 7N10 uses planar stripeand DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the

Datasheet: APTM50HM75SCTG , ATP304 , ATP401 , 2N5670 , 2SK2255-01MR , 7N10L-AA3 , 7N10G-AA3 , 7N10L-TN3 , 20N60 , AO4466L , AOD4144 , CS60N06C4 , EMB20P03V , FTW20N50A , HY1506P , HY1506I , HY1506B .

History: KX4N60F

Keywords - 7N10G-TN3 MOSFET datasheet

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