7N10G-TN3 PDF and Equivalents Search

 

7N10G-TN3 Specs and Replacement

Type Designator: 7N10G-TN3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO252

7N10G-TN3 substitution

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7N10G-TN3 datasheet

 9.1. Size:220K  utc
 7n10l 7n10g.pdf pdf_icon

7N10G-TN3

UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the ... See More ⇒

Detailed specifications: APTM50HM75SCTG, ATP304, ATP401, 2N5670, 2SK2255-01MR, 7N10L-AA3, 7N10G-AA3, 7N10L-TN3, 20N60, AO4466L, AOD4144, CS60N06C4, EMB20P03V, FTW20N50A, HY1506P, HY1506I, HY1506B

Keywords - 7N10G-TN3 MOSFET specs

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