FTW20N50A PDF and Equivalents Search

 

FTW20N50A Specs and Replacement

Type Designator: FTW20N50A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 145 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO3PN

FTW20N50A substitution

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FTW20N50A datasheet

 ..1. Size:278K  inpower semi
 ftw20n50a.pdf pdf_icon

FTW20N50A

FTW20N50A General Description VDSS 500 V FTW20N50A, the silicon N-channel Enhanced ID 20 A PD (TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 0.26 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor TO 3P(N) can be used in various power switching circuit for system miniaturiz... See More ⇒

Detailed specifications: 7N10L-AA3, 7N10G-AA3, 7N10L-TN3, 7N10G-TN3, AO4466L, AOD4144, CS60N06C4, EMB20P03V, IRFZ44, HY1506P, HY1506I, HY1506B, JCS18N50WH, ME04N25, ME04N25G, SiS412DN, RCD040N25TL

Keywords - FTW20N50A MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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