All MOSFET. ME04N25G Datasheet

 

ME04N25G Datasheet and Replacement


   Type Designator: ME04N25G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO252
 

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ME04N25G Datasheet (PDF)

 7.1. Size:480K  matsuki electric
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ME04N25G

ME04N25/ME04N25-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)1.8@VGS=10V The ME04N25 is the N-Channel logic enhancement mode power RDS(ON)2.0@VGS=5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to

 7.2. Size:574K  matsuki electric
 me04n25 me04n25-g.pdf pdf_icon

ME04N25G

ME04N25/ME04N25-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)1.8@VGS=10V The ME04N25 is the N-Channel logic enhancement mode power RDS(ON)2.0@VGS=5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to

Datasheet: CS60N06C4 , EMB20P03V , FTW20N50A , HY1506P , HY1506I , HY1506B , JCS18N50WH , ME04N25 , 10N60 , SiS412DN , RCD040N25TL , RCD041N25 , RCD051N20 , RCD075N19 , RCD080N25TL , RCD100N19 , RCJ050N25 .

Keywords - ME04N25G MOSFET datasheet

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