ME04N25G PDF and Equivalents Search

 

ME04N25G Specs and Replacement

Type Designator: ME04N25G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO252

ME04N25G substitution

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ME04N25G datasheet

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ME04N25G

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 7.2. Size:574K  matsuki electric
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ME04N25G

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Detailed specifications: CS60N06C4, EMB20P03V, FTW20N50A, HY1506P, HY1506I, HY1506B, JCS18N50WH, ME04N25, IRFP260N, SiS412DN, RCD040N25TL, RCD041N25, RCD051N20, RCD075N19, RCD080N25TL, RCD100N19, RCJ050N25

Keywords - ME04N25G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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