SiS412DN Datasheet and Replacement
Type Designator: SiS412DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 15.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: POWERPAK-1212-8
SiS412DN substitution
SiS412DN Datasheet (PDF)
sis412dn.pdf

New ProductSiS412DNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.024 at VGS = 10 V 12 100 % Rg Tested30 3.8 nC0.030 at VGS = 4.5 V 12APPLICATIONSPowerPAK 1212-8 Notebook PC- System Power- Load SwitchSD3.30 mm
sis414dn.pdf

New ProductSiS414DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a, g Qg (Typ.)Definition0.016 at VGS = 4.5 V 20 TrenchFET Power MOSFET30 8.2 nC0.020 at VGS = 2.5 V 20 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant to RoHS Directive 2002/95/
sis413dn.pdf

SiS413DNVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization:0.0094 at VGS = - 10 V - 18d- 30 35.4 nC For definitions of compliance please see0.0132 at VGS = - 4.5 V - 18dwww.vishay.com/doc?99912PowerPAK 1212-8APPLICATIONS
sis410dn.pdf

SiS410DNVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.0048 at VGS = 10 V 3520 12.7 nC 100 % Rg and UIS Tested0.0063 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8APPLICATIONS DC
Datasheet: EMB20P03V , FTW20N50A , HY1506P , HY1506I , HY1506B , JCS18N50WH , ME04N25 , ME04N25G , IRF3710 , RCD040N25TL , RCD041N25 , RCD051N20 , RCD075N19 , RCD080N25TL , RCD100N19 , RCJ050N25 , RCJ080N25 .
History: IRL620SPBF | SWU6N80D | KU2307Q | IRFP350LCPBF | WML125N12LG2 | TPN6R303NC | WML10N65C4
Keywords - SiS412DN MOSFET datasheet
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History: IRL620SPBF | SWU6N80D | KU2307Q | IRFP350LCPBF | WML125N12LG2 | TPN6R303NC | WML10N65C4



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