All MOSFET. RCD051N20 Datasheet

 

RCD051N20 Datasheet and Replacement


   Type Designator: RCD051N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm
   Package: SC-63
 

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RCD051N20 Datasheet (PDF)

 ..1. Size:364K  rohm
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RCD051N20

RCD051N20 Nch 200V 5.0A Power MOSFET Data SheetlOutlineVDSS200V CPT3(SC-63)RDS(on) (Max.)760mW(3) ID5.0A(2) (1) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Drive circuits can be simple.4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100%

 9.1. Size:1161K  rohm
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RCD051N20

Data Sheet10V Drive Nch MOSFET RCD050N20 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe

Datasheet: HY1506I , HY1506B , JCS18N50WH , ME04N25 , ME04N25G , SiS412DN , RCD040N25TL , RCD041N25 , IRFB4227 , RCD075N19 , RCD080N25TL , RCD100N19 , RCJ050N25 , RCJ080N25 , RCJ081N20 , RCJ100N25 , RCJ120N20 .

History: SMOS44N50 | SRT045N025H | SIS698DN

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