RCD051N20 PDF and Equivalents Search

 

RCD051N20 Specs and Replacement

Type Designator: RCD051N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm

Package: SC-63

RCD051N20 substitution

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RCD051N20 datasheet

 ..1. Size:364K  rohm
 rcd051n20.pdf pdf_icon

RCD051N20

RCD051N20 Nch 200V 5.0A Power MOSFET Data Sheet lOutline VDSS 200V CPT3 (SC-63) RDS(on) (Max.) 760mW (3) ID 5.0A (2) (1) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% ... See More ⇒

 9.1. Size:1161K  rohm
 rcd050n20.pdf pdf_icon

RCD051N20

Data Sheet 10V Drive Nch MOSFET RCD050N20 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 0.9 2.3 (1) (2) (3) 4) Drive circuits can be simple. 2.3 0.5 1.0 5) Parallel use is easy. Application Switching Packaging spe... See More ⇒

Detailed specifications: HY1506I, HY1506B, JCS18N50WH, ME04N25, ME04N25G, SiS412DN, RCD040N25TL, RCD041N25, 10N60, RCD075N19, RCD080N25TL, RCD100N19, RCJ050N25, RCJ080N25, RCJ081N20, RCJ100N25, RCJ120N20

Keywords - RCD051N20 MOSFET specs

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