All MOSFET. RCD100N19 Datasheet

 

RCD100N19 Datasheet and Replacement


   Type Designator: RCD100N19
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 190 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.182 Ohm
   Package: SC-63
 

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RCD100N19 Datasheet (PDF)

 ..1. Size:361K  rohm
 rcd100n19.pdf pdf_icon

RCD100N19

RCD100N19 Nch 190V 10A Power MOSFET DatasheetlOutlineVDSS190VCPT3(SC-63)RDS(on) (Max.)182mW(3) ID10A(2) (1) PD20WlFeatures lInner circuit1) Low voltage drive (4V drive).(1) Gate 2) Low on-resistance.(2) Drain (3) Source 3) Fast switching speed.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead plat

 7.1. Size:1162K  rohm
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RCD100N19

Data Sheet10V Drive Nch MOSFET RCD100N20 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe

Datasheet: ME04N25 , ME04N25G , SiS412DN , RCD040N25TL , RCD041N25 , RCD051N20 , RCD075N19 , RCD080N25TL , IRF9540 , RCJ050N25 , RCJ080N25 , RCJ081N20 , RCJ100N25 , RCJ120N20 , RCJ120N25 , RCJ160N20 , RCJ200N20 .

History: NCE2323 | SFG10R10BF

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