All MOSFET. RCJ050N25 Datasheet

 

RCJ050N25 Datasheet and Replacement


   Type Designator: RCJ050N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.36 Ohm
   Package: SC-83
 

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RCJ050N25 Datasheet (PDF)

 ..1. Size:422K  rohm
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RCJ050N25

RCJ050N25 Nch 250V 5.0A Power MOSFET DatasheetlOutline(2) VDSS250VLPT(S)(SC-83)RDS(on) (Max.)1360mWID5.0A(1) PD30W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Drive circuits can be simple.(3) Source 4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche

 ..2. Size:254K  inchange semiconductor
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RCJ050N25

isc N-Channel MOSFET Transistor RCJ050N25FEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 1.36(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: ME04N25G , SiS412DN , RCD040N25TL , RCD041N25 , RCD051N20 , RCD075N19 , RCD080N25TL , RCD100N19 , IRFB4115 , RCJ080N25 , RCJ081N20 , RCJ100N25 , RCJ120N20 , RCJ120N25 , RCJ160N20 , RCJ200N20 , RCJ220N25 .

History: 10N80

Keywords - RCJ050N25 MOSFET datasheet

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