RCJ510N25 Specs and Replacement
Type Designator: RCJ510N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 51 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SC-83
RCJ510N25 substitution
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RCJ510N25 datasheet
rcj510n25.pdf
RCJ510N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V LPT(S) (SC-83) RDS(on) (Max.) 65mW ID 51A (1) (2) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche test... See More ⇒
rcj510n25.pdf
isc N-Channel MOSFET Transistor RCJ510N25 FEATURES Drain Current I = 51A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
Detailed specifications: RCJ081N20, RCJ100N25, RCJ120N20, RCJ120N25, RCJ160N20, RCJ200N20, RCJ220N25, RCJ300N20, IRF9540N, RCJ700N20, RCX051N25, RCX081N20, RCX100N25, RCX200N20, RCX220N25, RCX300N20, RCX510N25
Keywords - RCJ510N25 MOSFET specs
RCJ510N25 cross reference
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RCJ510N25 replacement
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History: IRLML2803GPBF | SFS06R10DF
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