All MOSFET. RCJ700N20 Datasheet

 

RCJ700N20 Datasheet and Replacement


   Type Designator: RCJ700N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 340 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0427 Ohm
   Package: SC-83
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RCJ700N20 Datasheet (PDF)

 ..1. Size:435K  rohm
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RCJ700N20

RCJ700N20 Nch 200V 70A Power MOSFET DatasheetlOutlineVDSS200VLPT(S)(SC-83)RDS(on) (Max.)42.7mWID70A(1) (2) PD40W (3) lFeatures lInner circuit1) Low on-resistance.2) Fast switching speed.(1) Gate (2) Drain 3) Drive circuits can be simple.(3) Source 4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche tes

 ..2. Size:255K  inchange semiconductor
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RCJ700N20

isc N-Channel MOSFET Transistor RCJ700N20FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 87m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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History: TK13J65U

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