RCX100N25 Specs and Replacement
Type Designator: RCX100N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: TO-220FM
RCX100N25 substitution
- MOSFET ⓘ Cross-Reference Search
RCX100N25 datasheet
rcx100n25.pdf
PRODUCTS TYPE PAGE TO-220FM RCX100N25 1/4 1.TYPE RCX100N25 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 4.ABSOLUTE MAXIMUM RATINGS [Ta=25 ] DRAIN-SOURCE VOLTAGE VDSS 250V GATE-SOURCE VOLTAGE VGSS 30V DRAIN CURRENT CONTINUOUS 10A* ID PULSED 40A* IDP PW 10 s DUTY CYCLE 1% SOURCE CURRENT CONTI... See More ⇒
rcx100n25.pdf
isc N-Channel MOSFET Transistor RCX100N25 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 320m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: RCJ160N20, RCJ200N20, RCJ220N25, RCJ300N20, RCJ510N25, RCJ700N20, RCX051N25, RCX081N20, K3569, RCX200N20, RCX220N25, RCX300N20, RCX510N25, RCX511N25, RCX700N20, RDD020N60, RDD022N50
Keywords - RCX100N25 MOSFET specs
RCX100N25 cross reference
RCX100N25 equivalent finder
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RCX100N25 substitution
RCX100N25 replacement
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History: AP03N70P-A
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