All MOSFET. RCX100N25 Datasheet

 

RCX100N25 Datasheet and Replacement


   Type Designator: RCX100N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-220FM
 

 RCX100N25 substitution

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RCX100N25 Datasheet (PDF)

 ..1. Size:166K  rohm
 rcx100n25.pdf pdf_icon

RCX100N25

PRODUCTS TYPE PAGE TO-220FM RCX100N25 1/4 1.TYPE RCX100N25 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 4.ABSOLUTE MAXIMUM RATINGS [Ta=25] DRAIN-SOURCE VOLTAGEVDSS 250V GATE-SOURCE VOLTAGEVGSS 30V DRAIN CURRENT CONTINUOUS 10A* ID PULSED 40A* IDP PW10s DUTY CYCLE1% SOURCE CURRENT CONTI

 ..2. Size:251K  inchange semiconductor
 rcx100n25.pdf pdf_icon

RCX100N25

isc N-Channel MOSFET Transistor RCX100N25FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 320m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: RCJ160N20 , RCJ200N20 , RCJ220N25 , RCJ300N20 , RCJ510N25 , RCJ700N20 , RCX051N25 , RCX081N20 , SPP20N60C3 , RCX200N20 , RCX220N25 , RCX300N20 , RCX510N25 , RCX511N25 , RCX700N20 , RDD020N60 , RDD022N50 .

History: IPI80N08S2-07 | SI6926ADQ | SFP026N100C3 | SI7302DN | NTNS3193NZ | IRLU3714ZPBF | RU3040M

Keywords - RCX100N25 MOSFET datasheet

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