All MOSFET. RCX100N25 Datasheet

 

RCX100N25 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RCX100N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26.5 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-220FM

 RCX100N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RCX100N25 Datasheet (PDF)

 ..1. Size:166K  rohm
 rcx100n25.pdf

RCX100N25 RCX100N25

PRODUCTS TYPE PAGE TO-220FM RCX100N25 1/4 1.TYPE RCX100N25 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 4.ABSOLUTE MAXIMUM RATINGS [Ta=25] DRAIN-SOURCE VOLTAGEVDSS 250V GATE-SOURCE VOLTAGEVGSS 30V DRAIN CURRENT CONTINUOUS 10A* ID PULSED 40A* IDP PW10s DUTY CYCLE1% SOURCE CURRENT CONTI

 ..2. Size:251K  inchange semiconductor
 rcx100n25.pdf

RCX100N25 RCX100N25

isc N-Channel MOSFET Transistor RCX100N25FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 320m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NTD18N06L

 

 
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