RCX200N20 Specs and Replacement
Type Designator: RCX200N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO-220FM
RCX200N20 substitution
- MOSFET ⓘ Cross-Reference Search
RCX200N20 datasheet
rcx200n20.pdf
RCX200N20 Nch 200V 20A Power MOSFET Datasheet lOutline VDSS 200V TO-220FM RDS(on) (Max.) 130mW ID 20A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lPa... See More ⇒
rcx200n20.pdf
isc N-Channel MOSFET Transistor RCX200N20 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: RCJ200N20, RCJ220N25, RCJ300N20, RCJ510N25, RCJ700N20, RCX051N25, RCX081N20, RCX100N25, IRFP260, RCX220N25, RCX300N20, RCX510N25, RCX511N25, RCX700N20, RDD020N60, RDD022N50, RDD022N60
Keywords - RCX200N20 MOSFET specs
RCX200N20 cross reference
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RCX200N20 substitution
RCX200N20 replacement
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