RCX510N25 Datasheet and Replacement
Type Designator: RCX510N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 51 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO-220FM
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RCX510N25 Datasheet (PDF)
rcx510n25.pdf

PRODUCTS TYPE PAGE TO-220FM RCX510N25 1/4 1.TYPE RCX510N25 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 4.ABSOLUTE MAXIMUM RATINGS [Ta=25] DRAIN-SOURCE VOLTAGEVDSS 250V GATE-SOURCE VOLTAGEVGSS 30V DRAIN CURRENT CONTINUOUS 51A* ID PULSED 204A* IDP PW10s DUTY CYCLE1% SOURCE CURRENT CONT
rcx511n25.pdf

RCX511N25 Nch 250V 51A Power MOSFET DatasheetlOutlineVDSS250V TO-220FMRDS(on) (Max.)65mWID51A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Drive circuits can be simple.4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche testedlPac
rcx511n25.pdf

isc N-Channel MOSFET Transistor RCX511N25FEATURESDrain Current I = 51A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: RCJ080N25
Keywords - RCX510N25 MOSFET datasheet
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History: RCJ080N25



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