RDD050N20 PDF and Equivalents Search

 

RDD050N20 Specs and Replacement

Type Designator: RDD050N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 92 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm

Package: CPT3

RDD050N20 substitution

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RDD050N20 datasheet

 ..1. Size:157K  rohm
 rdd050n20.pdf pdf_icon

RDD050N20

RDD050N20 Transistors 10V Drive Nch MOSFET RDD050N20 Dimensions (Unit mm) Structure Silicon N-channel CPT3 MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source) Application Switching Packaging specifications Equivalent Circuit Package... See More ⇒

Detailed specifications: RCX300N20, RCX510N25, RCX511N25, RCX700N20, RDD020N60, RDD022N50, RDD022N60, RDD023N50, IRFB3607, RDN050N20, RDN100N20, RDN120N25, RDN150N20, RDR005N25, R5005CNX, R5007FNX, R5009FNJ

Keywords - RDD050N20 MOSFET specs

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