All MOSFET. RDD050N20 Datasheet

 

RDD050N20 Datasheet and Replacement


   Type Designator: RDD050N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
   Package: CPT3
 

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RDD050N20 Datasheet (PDF)

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RDD050N20

RDD050N20 Transistors 10V Drive Nch MOSFET RDD050N20 Dimensions (Unit : mm) Structure Silicon N-channel CPT3MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. (1)Base(Gate)(2)Collector(Drain)(3)Emitter(Source) Application Switching Packaging specifications Equivalent Circuit Package

Datasheet: RCX300N20 , RCX510N25 , RCX511N25 , RCX700N20 , RDD020N60 , RDD022N50 , RDD022N60 , RDD023N50 , IRF1407 , RDN050N20 , RDN100N20 , RDN120N25 , RDN150N20 , RDR005N25 , R5005CNX , R5007FNX , R5009FNJ .

History: KQB6N70 | SVF13N50S | 2N7000CSM | 4N80G-TND-R | AP03N70J-A-HF | MTM8N20 | LNF10N60

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