All MOSFET. RDN050N20 Datasheet

 

RDN050N20 Datasheet and Replacement


   Type Designator: RDN050N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
   Package: TO-220FN
 

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RDN050N20 Datasheet (PDF)

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RDN050N20

RDN050N20 Transistors 10V Drive Nch MOS FET RDN050N20 External dimensions (Unit : mm) Structure Silicon N-channel TO-220FN10.0 4.53.2 2.8MOS FET Features 1) Low on-resistance. 1.21.32) Low input capacitance. 3) Exellent resistance to damage from static electricity. 0.8(1)Gate2.54 2.54 0.75 2.6(2)Drain(1) (2) (3)(3)Source Application Switching

Datasheet: RCX510N25 , RCX511N25 , RCX700N20 , RDD020N60 , RDD022N50 , RDD022N60 , RDD023N50 , RDD050N20 , IRLZ44N , RDN100N20 , RDN120N25 , RDN150N20 , RDR005N25 , R5005CNX , R5007FNX , R5009FNJ , R5011FNJ .

History: RD3H080SP | NCEP055N10G | IRF7324 | SIHA21N60EF | APT20M18B2VFR | IRLU2905Z | SRM7N65

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