All MOSFET. RDN050N20 Datasheet

 

RDN050N20 Datasheet and Replacement


   Type Designator: RDN050N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.3 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
   Package: TO-220FN
      - MOSFET Cross-Reference Search

 

RDN050N20 Datasheet (PDF)

 ..1. Size:82K  rohm
 rdn050n20.pdf pdf_icon

RDN050N20

RDN050N20 Transistors 10V Drive Nch MOS FET RDN050N20 External dimensions (Unit : mm) Structure Silicon N-channel TO-220FN10.0 4.53.2 2.8MOS FET Features 1) Low on-resistance. 1.21.32) Low input capacitance. 3) Exellent resistance to damage from static electricity. 0.8(1)Gate2.54 2.54 0.75 2.6(2)Drain(1) (2) (3)(3)Source Application Switching

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - RDN050N20 MOSFET datasheet

 RDN050N20 cross reference
 RDN050N20 equivalent finder
 RDN050N20 lookup
 RDN050N20 substitution
 RDN050N20 replacement

 

 
Back to Top

 


 
.