RDN050N20 Specs and Replacement
Type Designator: RDN050N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 92 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
Package: TO-220FN
RDN050N20 substitution
- MOSFET ⓘ Cross-Reference Search
RDN050N20 datasheet
rdn050n20.pdf
RDN050N20 Transistors 10V Drive Nch MOS FET RDN050N20 External dimensions (Unit mm) Structure Silicon N-channel TO-220FN 10.0 4.5 3.2 2.8 MOS FET Features 1) Low on-resistance. 1.2 1.3 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) (3)Source Application Switching... See More ⇒
Detailed specifications: RCX510N25, RCX511N25, RCX700N20, RDD020N60, RDD022N50, RDD022N60, RDD023N50, RDD050N20, AON6380, RDN100N20, RDN120N25, RDN150N20, RDR005N25, R5005CNX, R5007FNX, R5009FNJ, R5011FNJ
Keywords - RDN050N20 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SJ182L
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