RDN100N20 PDF and Equivalents Search

 

RDN100N20 Specs and Replacement

Type Designator: RDN100N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 193 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO-220FN

RDN100N20 substitution

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RDN100N20 datasheet

 ..1. Size:435K  rohm
 rdn100n20.pdf pdf_icon

RDN100N20

RDN100N20 Transistors Switching (200V, 10A) RDN100N20 External dimensions (Unit mm) Features 1) Low on-resistance. TO-220FN +0.3 +0.3 4.5 -0.1 2) Low input capacitance. 10.0 -0.1 +0.2 2.8 3.2 0.2 -0.1 3) Exellent resistance to damage from static electricity. Application 1.2 Switching 1.3 0.8 (1) Gate 0.75+0.1 2.6 0.5 2.54 0.5 2.54 0.5 -0.05 Structure ... See More ⇒

Detailed specifications: RCX511N25, RCX700N20, RDD020N60, RDD022N50, RDD022N60, RDD023N50, RDD050N20, RDN050N20, IRF530, RDN120N25, RDN150N20, RDR005N25, R5005CNX, R5007FNX, R5009FNJ, R5011FNJ, R5016FNJ

Keywords - RDN100N20 MOSFET specs

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