All MOSFET. RDN100N20 Datasheet

 

RDN100N20 Datasheet and Replacement


   Type Designator: RDN100N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO-220FN
 

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RDN100N20 Datasheet (PDF)

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RDN100N20

RDN100N20 Transistors Switching (200V, 10A) RDN100N20 External dimensions (Unit : mm) Features 1) Low on-resistance. TO-220FN+0.3+0.34.5 -0.12) Low input capacitance. 10.0 -0.1+0.22.83.20.2 -0.13) Exellent resistance to damage from static electricity. Application 1.2Switching 1.30.8(1) Gate0.75+0.1 2.60.52.540.5 2.540.5 -0.05 Structure

Datasheet: RCX511N25 , RCX700N20 , RDD020N60 , RDD022N50 , RDD022N60 , RDD023N50 , RDD050N20 , RDN050N20 , AO4407 , RDN120N25 , RDN150N20 , RDR005N25 , R5005CNX , R5007FNX , R5009FNJ , R5011FNJ , R5016FNJ .

History: FMH09N90E | LNG04R165 | IPA80R750P7 | CJ4153

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