R5005CNX Specs and Replacement
Type Designator: R5005CNX
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO-220FM
R5005CNX substitution
- MOSFET ⓘ Cross-Reference Search
R5005CNX datasheet
r5005cnx.pdf
R5005CNX Datasheet Nch 500V 5A Power MOSFET lOutline l TO-220FM VDSS 500V RDS(on)(Max.) 1.6 ID 5A PD 40W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits ... See More ⇒
r5005cnj.pdf
Data Sheet 10V Drive Nch MOSFET R5005CNJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High-speed switching. 2.54 0.4 0.78 2.7 3) Wide range of SOA. 5.08 (1) Gate (1) (2) (3) (2) Drain 4) Drive circuits can be simple. (3) Source 5) Parallel use is easy. Application Switching Packagin... See More ⇒
Detailed specifications: RDD022N60, RDD023N50, RDD050N20, RDN050N20, RDN100N20, RDN120N25, RDN150N20, RDR005N25, STP80NF70, R5007FNX, R5009FNJ, R5011FNJ, R5016FNJ, R5021ANJ, R520, R521, R6002END
Keywords - R5005CNX MOSFET specs
R5005CNX cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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