All MOSFET. R5021ANJ Datasheet

 

R5021ANJ Datasheet and Replacement


   Type Designator: R5021ANJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: LPTS
 

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R5021ANJ Datasheet (PDF)

 ..1. Size:805K  rohm
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R5021ANJ

R5021ANJ Nch 500V 21A Power MOSFET DatasheetlOutlineVDSS (2) 500V LPTS(SC-83)RDS(on) (Max.)0.22WID21A(1) PD100W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free

 7.1. Size:231K  rohm
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R5021ANJ

R5021ANX Transistors 10V Drive Nch MOSFET R5021ANX Dimensions (Unit : mm) Structure Silicon N-channel MOSFETTO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.22) Fast switching speed. 1.33) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8(1)Base4) Drive circuits can be simple. 2.54 2.54 0.75 2.6(2)Collector (1) (2) (3)5) Parallel use is

Datasheet: RDN120N25 , RDN150N20 , RDR005N25 , R5005CNX , R5007FNX , R5009FNJ , R5011FNJ , R5016FNJ , 10N65 , R520 , R521 , R6002END , R6004END , R6004ENJ , R6004ENX , R6007ENJ , R6007ENX .

History: APT50M50JLC | R6007ENJ | NCE8205A | FDS3170N7 | HGP1K2N20ML | KPA1873 | PDD6902

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