R5021ANJ PDF and Equivalents Search

 

R5021ANJ Specs and Replacement

Type Designator: R5021ANJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: LPTS

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R5021ANJ datasheet

 ..1. Size:805K  rohm
 r5021anj.pdf pdf_icon

R5021ANJ

R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS (2) 500V LPTS (SC-83) RDS(on) (Max.) 0.22W ID 21A (1) PD 100W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free... See More ⇒

 7.1. Size:231K  rohm
 r5021anx.pdf pdf_icon

R5021ANJ

R5021ANX Transistors 10V Drive Nch MOSFET R5021ANX Dimensions (Unit mm) Structure Silicon N-channel MOSFET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 2) Fast switching speed. 1.3 3) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8 (1)Base 4) Drive circuits can be simple. 2.54 2.54 0.75 2.6 (2)Collector (1) (2) (3) 5) Parallel use is... See More ⇒

Detailed specifications: RDN120N25, RDN150N20, RDR005N25, R5005CNX, R5007FNX, R5009FNJ, R5011FNJ, R5016FNJ, 4N60, R520, R521, R6002END, R6004END, R6004ENJ, R6004ENX, R6007ENJ, R6007ENX

Keywords - R5021ANJ MOSFET specs

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