R6002END Datasheet and Replacement

R6002ENDDatasheetNch 600V 2A Power MOSFETlOutlinel CPT3VDSS 600VRDS(on)(Max.) 3.4 ID 1.7A PD 20W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Gate-source voltage (VGSS) guaranteed tobe 20V.4) Drive circuits can be simpl

R6002END3DatasheetNch 600V 2A Power MOSFETlOutlinel TO-252VDSS 600VRDS(on)(Max.) 3.4ID 1.7APD 26W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching4) Drive circuits can be simple5) Parallel use is easy6) Pb-free plating ; RoHS compliantlApplicationllPackaging specifications

isc N-Channel MOSFET Transistor R6002END3FEATURESDrain Current I =1.7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo