R6002END Datasheet and Replacement
Type Designator: R6002END
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: SC-63
R6002END substitution
R6002END Datasheet (PDF)
r6002end.pdf

R6002ENDDatasheetNch 600V 2A Power MOSFETlOutlinel CPT3VDSS 600VRDS(on)(Max.) 3.4 ID 1.7A PD 20W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Gate-source voltage (VGSS) guaranteed tobe 20V.4) Drive circuits can be simpl
r6002end3.pdf

R6002END3DatasheetNch 600V 2A Power MOSFETlOutlinel TO-252VDSS 600VRDS(on)(Max.) 3.4ID 1.7APD 26W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching4) Drive circuits can be simple5) Parallel use is easy6) Pb-free plating ; RoHS compliantlApplicationllPackaging specifications
r6002end3.pdf

isc N-Channel MOSFET Transistor R6002END3FEATURESDrain Current I =1.7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: R5005CNX , R5007FNX , R5009FNJ , R5011FNJ , R5016FNJ , R5021ANJ , R520 , R521 , 5N65 , R6004END , R6004ENJ , R6004ENX , R6007ENJ , R6007ENX , R6009ENJ , R6009ENX , R6011ENJ .
History: KS2302AA | SMK0460IS | 2SK1500 | ME120N10T-G | BRI630 | NTMS4873NFR2G | WTK9971
Keywords - R6002END MOSFET datasheet
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History: KS2302AA | SMK0460IS | 2SK1500 | ME120N10T-G | BRI630 | NTMS4873NFR2G | WTK9971



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