R6002END MOSFET Datasheet: N-Ch, 600V, 1.7A. Full specification with pinout and replacement list

R6002END Specs and Replacement

Type Designator: R6002END

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm

Package: SC-63

R6002END substitution

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R6002END datasheet

..1. Size:2825K rohm
r6002end.pdf pdf_icon

R6002END Datasheet Nch 600V 2A Power MOSFET lOutline l CPT3 VDSS 600V RDS(on)(Max.) 3.4 ID 1.7A PD 20W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simpl... See More ⇒

0.1. Size:1520K 1
r6002end3.pdf pdf_icon

R6002END3 Datasheet Nch 600V 2A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 3.4 ID 1.7A PD 26W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching 4) Drive circuits can be simple 5) Parallel use is easy 6) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications ... See More ⇒

0.2. Size:266K inchange semiconductor
r6002end3.pdf pdf_icon

isc N-Channel MOSFET Transistor R6002END3 FEATURES Drain Current I =1.7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 3.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

Detailed specifications: R5005CNX, R5007FNX, R5009FNJ, R5011FNJ, R5016FNJ, R5021ANJ, R520, R521, 2SK3568, R6004END, R6004ENJ, R6004ENX, R6007ENJ, R6007ENX, R6009ENJ, R6009ENX, R6011ENJ