RFD3N08L Specs and Replacement

Type Designator: RFD3N08L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 55 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO251AA

RFD3N08L substitution

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RFD3N08L datasheet

 0.1. Size:365K  fairchild semi
 rfd3n08l-sm.pdf pdf_icon

RFD3N08L

RFD3N08L, RFD3N08LSM Data Sheet July 1999 File Number 2836.4 3A, 80V, 0.800 Ohm, Logic Level, Features N-Channel Power MOSFETs 3A, 80V Title The RFD3N08L and RFD3N08LSM are N-Channel rDS(ON) = 0.800 enhancement mode silicon gate power field effect transistors FD3 Temperature Compensating PSPICE Model specifically designed for use with logic level (5V) driving 8L, ... See More ⇒

Detailed specifications: RFD16N05LSM, RFD16N05SM, RFD16N06LE, RFD16N06LESM, RFD3055, RFD3055LE, RFD3055LESM, RFD3055SM, IRFZ44, RFD3N08LSM, RFD4N06L, RFD4N06LSM, RFD7N10LE, RFD7N10LESM, RFD8P05, RFD8P05SM, RFD8P06E

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